12N02,12N02場效應(yīng)管參數(shù),12N02參數(shù)規(guī)格書,12N02代換
12N02場效應(yīng)管,MOS管12N02參數(shù)資料,12N02引腳圖,12N02中文資料規(guī)格書,12N02封裝SOP-8
12N02場效應(yīng)管,MOS管12N02參數(shù)資料,12N02引腳圖,12N02中文資料規(guī)格書,12N02封裝SOP-8
12N02/SOP-8/SOIC-8封裝參數(shù):點(diǎn)擊查看
12N02場效應(yīng)管參數(shù)具體如下:
12N02場效應(yīng)管極性:NPN
開啟電壓VGS:min 0.5V typ 0.75V max 1.2V
開啟電壓VGS:min 0.5V typ 0.75V max 1.2V
Drain-Source Voltage 漏源電壓Vds:20V
Gate-Source Voltage 柵源電壓Vgs:±12V
Continuous Drain Current 漏極電流Id Tc=25℃:12A
Power Dissipation 功率損耗Pd Ta=25℃:3W
Power Dissipation 功率損耗Pd Ta=70℃:0.86W
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=15A,VGS=4.5V:Typ 8mΩ Max 11.2mΩ
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=10A,VGS=2.5V:Tpy 11.7mΩ Max 17.5mΩ
Junction and Storage Temperature Range 溫度范圍:-55~+150℃
12N02場效應(yīng)管SOP-8/SOIC-8封裝尺寸:
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